共 50 条
- [41] GALLIUM ARSENIDE INTEGRATED CIRCUIT TECHNOLOGIES/ TECHNOLOGIES DE CIRCUITS INTEGRES SUR ARSENIURE DE GALLIUM. [J]. 1980, V 23 (N 3): : 193 - 204
- [42] OPTICAL INHOMOGENEITIES IN GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1858 - &
- [43] Integrated quantum photonic circuits made from diamond [J]. DIAMOND FOR QUANTUM APPLICATIONS, PT 2, 2021, 104 : 149 - 171
- [44] GALLIUM-ARSENIDE MONOLITHIC OPTOELECTRONIC CIRCUITS [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 272 : 87 - 90
- [45] Noise analysis of MESFET Gallium Arsenide circuits [J]. DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS, 1999, 3893 : 188 - 194
- [47] Optical studies of indium gallium arsenide strained layer quantum wells [J]. 1600, Publ by Elsevier Science Publ Co Inc, New York, NY, USA
- [49] Quantum-Optical Spectroscopy of Semiconductors [J]. XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA, 2013, 41
- [50] HOW GALLIUM-ARSENIDE WAFERS ARE MADE [J]. APPLIED ORGANOMETALLIC CHEMISTRY, 1994, 8 (03) : 167 - 174