ABINITIO MOLECULAR-DYNAMICS STUDY OF DEFECTS ON THE RECONSTRUCTED SI(001) SURFACE

被引：46
|
作者：
IHARA, S [1 ]
HO, SL [1 ]
UDA, T [1 ]
HIRAO, M [1 ]
机构：
[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 15期
关键词：
D O I：
10.1103/PhysRevLett.65.1909
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a new defect model for the reconstructed Si(001) surface. Ab initio molecular-dynamics simulations at finite temperature show the existence of interstitial dimers which are recessed from the surface. These dimers and adjacent on-surface dimers are both symmetric. The possibility that missing dimer vacancies observed by scanning tunneling microscopy contain these new surface defects is pointed out. © 1990 The American Physical Society.
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页码：1909 / 1912
页数：4
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