INFLUENCE OF SURFACE TREATMENT OF SILICON ON EFFECTIVE IMPURITY CHARGE-DENSITY IN SURFACE STATES OF MOS STRUCTURES

被引：2
|
作者：
CSABAY, O
FRANK, H
机构：
[1] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT RADIOTECHNOL, BRATISLAVA, CZECHOSLOVAKIA
[2] TECH UNIV PRAGUE, DEPT SOLID STATE ENGN, PRAGUE, CZECHOSLOVAKIA
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期
关键词：
D O I：
10.1016/0038-1101(73)90197-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：985 / 989
页数：5
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