NEW POLYTYPE OF SILICON-CARBIDE 20H

被引：0

作者：

INOUE, Z ^{[1
]}

KOMATSU, H ^{[1
]}

INOMATA, Y ^{[1
]}

机构：

[1] NATL INST RES INORG MAT,NIIHARI,IBARAGI 30031,JAPAN

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1972年 / 28卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：S120 / S120

页数：1

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