NEW POLYTYPE OF SILICON-CARBIDE 20H

被引：0
|
作者：
INOUE, Z [1 ]
KOMATSU, H [1 ]
INOMATA, Y [1 ]
机构：
[1] NATL INST RES INORG MAT,NIIHARI,IBARAGI 30031,JAPAN
来源：
ACTA CRYSTALLOGRAPHICA SECTION A | 1972年 / 28卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：S120 / S120
页数：1
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