共 50 条
- [35] LONG-TIME STABILITY OF NEGATIVE ELECTRON-AFFINITY PHOTOCATHODES ON THE BASE OF PARA-GAAS-CS, O RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (07): : 1559 - 1561
- [36] STRUCTURAL MODEL FOR THE NEGATIVE ELECTRON-AFFINITY SURFACE OF O/CS/SI(001)2X1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (02): : L303 - L305
- [37] THERMIONIC EMISSION FROM INGAASP PHOTOCATHODES WITH NEGATIVE ELECTRON-AFFINITY RADIOTEKHNIKA I ELEKTRONIKA, 1984, 29 (06): : 1209 - 1210
- [38] MECHANISM OF PHOTOELECTRON EMISSION FROM SEMICONDUCTORS WITH NEGATIVE ELECTRON-AFFINITY RADIOTEKHNIKA I ELEKTRONIKA, 1978, 23 (09): : 1998 - 2002
- [39] PHOTOEMISSION-STUDY OF THE NEGATIVE ELECTRON-AFFINITY SURFACES OF O/CS/SI(001)2X1 AND O/K/SI(001)2X1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04): : 3205 - 3209
- [40] Effect of mirror imaging power on the electron photoemission from GaAs with negative electron affinity FIZIKA TVERDOGO TELA, 1996, 38 (01): : 306 - 309