HIGH-TEMPERATURE ION-IMPLANTATION IN DIAMOND

被引：18
|
作者：
LEE, YH
BROSIOUS, PR
CORBETT, JW
机构：
[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 50卷 / 01期
关键词：
D O I：
10.1002/pssa.2210500127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：237 / 242
页数：6
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