HIGH-POWER INDIVIDUALLY ADDRESSABLE MONOLITHIC LASER DIODE-ARRAY

被引:7
|
作者
TSUNEKANE, M
ENDO, K
NIDO, M
KOMAZAKI, I
KATAYAMA, R
YOSHIHARA, K
YAMANAKA, Y
YUASA, T
机构
关键词
D O I
10.1049/el:19890730
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1091 / 1092
页数:2
相关论文
共 50 条
  • [31] Monolithic integration of individually addressable light-emitting diode color pixels
    Chung, Kunook
    Sui, Jingyang
    Demory, Brandon
    Teng, Chu-Hsiang
    Ku, Pei-Cheng
    APPLIED PHYSICS LETTERS, 2017, 110 (11)
  • [32] AlGaInN laser diode bar & array technology for high power and individual addressable applications.
    Najda, S. P.
    Perlin, P.
    Suski, T.
    Marona, L.
    Bockowski, M.
    Leszczynski, M.
    Wisniewski, P.
    Czernecki, R.
    Kucharski, R.
    Targowski, G.
    SEMICONDUCTOR LASERS AND LASER DYNAMICS VII, 2016, 9892
  • [33] Hardening with high-power diode laser
    Pawłowicz, W., 1600, Taylor and Francis Ltd. (28):
  • [34] Thermal Management of Quantum Cascade Lasers in an Individually Addressable Monolithic Array Architecture
    Missaggia, Leo
    Wang, Christine
    Connors, Michael
    Saar, Brian
    Sanchez-Rubio, Antonio
    Creedon, Kevin
    Turner, George
    Herzog, William
    COMPONENTS AND PACKAGING FOR LASER SYSTEMS II, 2016, 9730
  • [35] Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips
    Du Y.-Q.
    Wang Z.-F.
    Zhang X.-Y.
    Yang G.-W.
    Li T.
    Liu Y.-X.
    Li B.
    Chang Y.-D.
    Zhao Y.-L.
    Lan Y.
    Faguang Xuebao/Chinese Journal of Luminescence, 2021, 42 (05): : 674 - 681
  • [36] High-power operation of a wide-striped InGaN laser diode array
    Samonji, Katsuya
    Yoshida, Shinji
    Hagino, Hiroyuki
    Yamanaka, Kazuhiko
    Takigawa, Shinichi
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277
  • [37] DIODE-ARRAY IMAGES OF LINEAR LASER SPARKS
    SCHMIEDER, RW
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6101 - 6105
  • [38] INDIVIDUALLY ADDRESSABLE, HIGH-POWER SINGLEMODE LASER-DIODES OPERATING AT 0.8, 0.85, AND 0.92-MU-M
    MAJOR, JS
    WELCH, DF
    PLANO, WE
    SCIFRES, D
    ELECTRONICS LETTERS, 1992, 28 (04) : 391 - 393
  • [39] PHASE MEASUREMENT OF LASER DIODE-ARRAY RADIATION
    YAELI, J
    APPLIED PHYSICS LETTERS, 1986, 49 (08) : 427 - 429
  • [40] NOVEL DENSELY PACKED LASER DIODE-ARRAY
    HARDING, CM
    WATERS, RG
    ELECTRONICS LETTERS, 1991, 27 (24) : 2233 - 2234