DEFECTS PRODUCED IN SILICON BY HIGH-ENERGY ELECTRON AND GAMMA-IRRADIATION AND THEIR EFFECTS UPON RECOMBINATION LIFETIME

被引：0

作者：

BROTHERTON, SD ^{[1
]}

BRADLEY, P ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C98 / C98

页数：1

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