ANALYSIS OF THE ENHANCED HOT-ELECTRON INJECTION IN SPLIT-GATE TRANSISTORS USEFUL FOR EEPROM APPLICATIONS

被引：44
|
作者：
VANHOUDT, J
HEREMANS, P
DEFERM, L
GROESENEKEN, G
MAES, HE
机构：
[1] Interuniversity Micro-Electronics Center (IMEC), Louyen, B-3001
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期
关键词：
D O I：
10.1109/16.129096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
When applying a high voltage to the floating gate of a split-gate transistor, enhanced hot-electron injection is observed that can be used for 5-V-compatible EPROM or Flash EEPROM device operation. The current collected on the gate is equal to the total electron injection current. Charge-pumping measurements and device simulations are used to analyze the electron injection and to determine its exact position in the transistor channel. Gate currents only show a weak dependence on both transistor channel lengths. The width of the spacer between both transistor gates has however been determined to be an important injection parameter.
引用
下载
收藏
页码：1150 / 1156
页数：7
相关论文
共 50 条
  • [21] Gate current model for the hot-electron regime of operation in heterostructure field effect transistors
    Martinez, EJ
    Shur, MS
    Schuermeyer, FL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) : 2108 - 2115
  • [22] HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS OPERATED IN HOT-ELECTRON REGIME
    MARTINEZ, E
    SHUR, M
    SCHUERMEYER, F
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 854 - 856
  • [23] Enhanced nonlinear conductivity due to hot-electron injection in carbon nanotubes
    Abukari, S. S.
    Mensah, S. Y.
    Musah, R.
    Amekpewu, M.
    Mensah, N. G.
    Adu, K. W.
    LOW TEMPERATURE PHYSICS, 2022, 48 (07) : 552 - 555
  • [24] Enhanced nonlinear conductivity due to hot-electron injection in carbon nanotubes
    Abukari, S.S.
    Mensah, S.Y.
    Musah, R.
    Amekpewu, M.
    Mensah, N.G.
    Adu, K.W.
    Fizika Nizkikh Temperatur, 2022, 48 (07): : 621 - 624
  • [25] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION
    HSU, FC
    GRINOLDS, HR
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74
  • [26] EFFECTS OF COMBINED X-RAY-IRRADIATION AND HOT-ELECTRON INJECTION ON NMOS TRANSISTORS
    BALASINSKI, A
    CHEN, WL
    MA, TP
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (07) : 737 - 743
  • [27] Floating-Gate MOS Charge Programming Using Pulsed Hot-Electron Injection
    Ochoa-Padilla, J. L.
    Gomez-Castaneda, F.
    Moreno-Cadenas, J. A.
    2013 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE), 2013, : 478 - 481
  • [28] Cutoff frequency characteristics of gate-controlled hot-electron transistors by Monte Carlo simulation
    Igarashi, Mitsuhiko
    Furuya, Kazuhito
    Miyamoto, Yasuyuki
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1, 2008, 5 (01): : 70 - 73
  • [29] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION - COMMENTS
    PIMBLEY, JM
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 256 - 258
  • [30] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION - REPLY
    HSU, FC
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 258 - 260
12345