ANALYSIS OF THE ENHANCED HOT-ELECTRON INJECTION IN SPLIT-GATE TRANSISTORS USEFUL FOR EEPROM APPLICATIONS

被引：44
|
作者：
VANHOUDT, J
HEREMANS, P
DEFERM, L
GROESENEKEN, G
MAES, HE
机构：
[1] Interuniversity Micro-Electronics Center (IMEC), Louyen, B-3001
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 05期
关键词：
D O I：
10.1109/16.129096
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
When applying a high voltage to the floating gate of a split-gate transistor, enhanced hot-electron injection is observed that can be used for 5-V-compatible EPROM or Flash EEPROM device operation. The current collected on the gate is equal to the total electron injection current. Charge-pumping measurements and device simulations are used to analyze the electron injection and to determine its exact position in the transistor channel. Gate currents only show a weak dependence on both transistor channel lengths. The width of the spacer between both transistor gates has however been determined to be an important injection parameter.
引用
收藏
页码：1150 / 1156
页数：7
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