COMPARISON OF THE THEORETICAL AND EXPERIMENTAL DIFFERENTIAL GAIN IN STRAINED LAYER INGAAS/GAAS QUANTUM-WELL LASERS

被引：24
|
作者：
LESTER, LF
OFFSEY, SD
RIDLEY, BK
SCHAFF, WJ
FOREMAN, BA
EASTMAN, LF
机构：
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
[2] UNIV ESSEX,DEPT PHYS,COLCHESTER CO4 3SQ,ESSEX,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期
关键词：
D O I：
10.1063/1.105543
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A theoretical model that uses simple, analytic valence band equations to calculate the differential pin in strained layer InGaAs/GaAs quantum wells shows good agreement with experimental differential gain values obtained from multiple quantum well strained layer lasers. The differential gain in these devices is 7 times greater than in bulk, p-type doped InGaAsP lasers. Calculations including nonlinear damping effects indicate that modulation bandwidths exceeding 60 GHz should be achievable in strained layer quantum well lasers.
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页码：1162 / 1164
页数：3
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