共 50 条
- [34] ELECTROCHEMISTRY OF N-TYPE MOSE2 - A COMPARISON OF PHOTOCORROSION AND DISSOLUTION UNDER HIGH ANODIC BIAS ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-WIESBADEN, 1984, 139 : 1 - 9
- [35] INFLUENCE OF ANODIC POLARIZATION CONDITIONS UNDER STEADY ILLUMINATION ON THE FORMATION AND PROPERTIES OF POROUS SURFACE LAYERS ON n-TYPE SILICON. Soviet electrochemistry, 1987, 22 (08): : 986 - 992
- [36] INFLUENCE OF ANODIC POLARIZATION CONDITIONS UNDER STEADY ILLUMINATION ON THE FORMATION AND PROPERTIES OF POROUS SURFACE-LAYERS ON N-TYPE SILICON SOVIET ELECTROCHEMISTRY, 1986, 22 (08): : 986 - 992
- [39] Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer Electrochimica Acta, 1999, 44 (21): : 3743 - 3749