共 50 条
- [23] Calculation of electronic states of GaN, AlN and BN(110) abnormal surface relaxation Zhengzhou Daxue Xuebao/Journal of Zhengzhou University, 2000, 32 (01): : 42 - 47
- [24] BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping Russian Physics Journal, 2017, 59 : 2186 - 2190
- [25] First-principles study on piezoelectric constants in strained BN, AlN, and GaN JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12A): : L1421 - L1423
- [27] Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN Semiconductors, 2002, 36 : 41 - 44
- [28] Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN PHYSICAL REVIEW B, 1996, 53 (24): : 16310 - 16326
- [29] Influence of surface topography on in situ reflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (04):