PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：70
|
作者：
BICKNELL, RN
GILES, NC
SCHETZINA, JF
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 25期
关键词：
D O I：
10.1063/1.97231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1735 / 1737
页数：3
相关论文
共 50 条
  • [21] CDTE-HGTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    FAURIE, JP
    MILLION, A
    PIAGUET, J
    APPLIED PHYSICS LETTERS, 1982, 41 (08) : 713 - 715
  • [22] LUMINESCENCE CHARACTERIZATION OF CDTE-IN GROWN BY MOLECULAR-BEAM EPITAXY
    BASSANI, F
    TATARENKO, S
    SAMINADAYAR, K
    BLEUSE, J
    MAGNEA, N
    PAUTRAT, JL
    APPLIED PHYSICS LETTERS, 1991, 58 (23) : 2651 - 2653
  • [23] Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy
    Ming Luo
    B. L. Vanmil
    R. P. Tompkins
    Y. Cui
    T. Mounts
    U. N. Roy
    A. Burger
    T. H. Myers
    N. C. Giles
    Journal of Electronic Materials, 2003, 32 : 737 - 741
  • [24] DONOR DOPING OF (211) CDTE EPILAYERS AND CDTE/CDZNTE PIEZOELECTRIC HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    BASSANI, F
    TATARENKO, S
    KHENG, K
    JOUNEAU, PH
    SAMINADAYAR, K
    MAGNEA, N
    COX, R
    APPLIED PHYSICS LETTERS, 1993, 63 (15) : 2106 - 2108
  • [25] MOLECULAR-BEAM EPITAXY GROWTH OF BI EPILAYERS AND BI-CDTE SUPERLATTICES
    DIVENERE, A
    YI, XJ
    HOU, CL
    WANG, HC
    CHEN, J
    KETTERSON, JB
    WONG, GK
    MEYER, JR
    HOFFMAN, CA
    BARTOLI, FJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1136 - 1139
  • [26] REFLECTION ELECTRON-MICROSCOPY OF EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    DECOOMAN, BC
    KUESTERS, KH
    CARTER, CB
    TUNG, H
    WICKS, G
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 50 (06): : 849 - 856
  • [27] TRANSPORT-PROPERTIES OF INAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KALEM, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S200 - S203
  • [28] ON THE ORIGIN OF OVAL DEFECT WITH NUCLEUS ON EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    NISHIKAWA, Y
    KANAMOTO, K
    TOKUDA, Y
    FUJIWARA, K
    NAKAYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (06): : 908 - 909
  • [29] COMPOSITION CHARACTERIZATION METHODS FOR HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ODA, N
    KANNO, T
    SAGA, M
    OIKAWA, R
    MAEJIMA, Y
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 193 - 196
  • [30] Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy
    Luo, M
    Vanmil, BL
    Tompkins, RP
    Cui, Y
    Mounts, T
    Roy, UN
    Burger, A
    Myers, TH
    Giles, NC
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) : 737 - 741
12345