FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS

Heteroepitaxial beta-SiC thin films have been deposited on to silicon substrates using methyl silane and 1,2-bis (bromosilyl) ethane Si-C bonded precursors at temperatures in the range 650-1000 degrees C. The silicon carbide layers were polycrystalline and epitaxially oriented with respect to the silicon substrate. These films have been used as substrates for the deposition of oriented boron doped diamond films using a bias enhanced microwave assisted CVD process. The formation of heterojunctions consisting of p-type diamond and intrinsic or n-type silicon carbide is considered and the electrical properties of the junctions are discussed.