HIGH-RESOLUTION PHOTOELECTRON-SPECTROSCOPY STUDY OF (ROOT-3X-ROOT-3) R30-DEGREES-AG ON SI(111)

High-resolution surface and bulk sensitive photoemission were used to study the Si2p core level from the (square-root 3 x square-root 3)R30-degrees-Ag/Si(111) surface. Four components of the Si2p levels are observed for this system. Their relative positions are found to be independent with respect to sample preparation, suggesting no net change in the local atomic order of the square-root 3 domains. However, their relative intensities, measured for surfaces prepared at deposition temperatures of 350 and 530-degrees-C, show significant differences which are assigned to changes in the relative square-root 3 domain sizes.