SI L2,3 EDGE IN REFLECTANCE OF CVD SIC

被引：0
|
作者：
REHN, V
JONES, VO
CHOYKE, WJ
机构：
[1] WESTINGHOUSE ELECT CORP,PITTSBURGH,PA 15235
[2] USN,WEAPONS CTR,CHINA LAKE,CA 93555
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：205 / 205
页数：1
相关论文
共 50 条
  • [41] X-ray photoabsorption and total electron yield of Fe thin films at the L2,3 edge
    Ufuktepe, Y
    Akgül, G
    Lüning, J
    JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 401 (1-2) : 193 - 196
  • [42] OPTICAL-CONSTANTS OF THIN SILICON FILMS NEAR THE SILICON L2,3 ABSORPTION-EDGE
    SEELY, JF
    HUNTER, WR
    RIFE, JC
    KOWALSKI, MP
    APPLIED OPTICS, 1992, 31 (34): : 7367 - 7370
  • [43] X-ray photoabsorption and total electron yield of Fe thin films at the L2,3 edge
    Ufuktepe, Y.
    Akgül, G.
    Lüning, J.
    Journal of Alloys and Compounds, 2005, 401 (1-2): : 193 - 196
  • [44] REFLECTIVITY MEASUREMENTS NEAR L2,3 EDGE OF P-TYPE AND N-TYPE SILICON
    FUJITA, H
    IGUCHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (02) : 220 - 227
  • [45] HIGH-RESOLUTION SOFT-X-RAY SPECTROSCOPY AT L2,3 EDGE OF DOPED SILICON
    BACHRACH, RZ
    BROWN, FC
    SKIBOWSKI, M
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 488 - 488
  • [46] SURFACE EXTENDED ENERGY LOSS FINE STRUCTURE (EELFS) ABOVE CR L2,3 EDGE.
    Ishida, Tadashi
    1600, (25):
  • [47] First principles calculations of the L2,3-edge XANES spectra for V2O3
    Brik, M. G.
    Ogasawara, K.
    Ishii, T.
    Ikeno, H.
    Tanaka, I.
    RADIATION PHYSICS AND CHEMISTRY, 2006, 75 (11) : 1564 - 1570
  • [48] QUANTITIVE DETERMINATION OF UNOCCUPIED D STATES USING L2,3 EDGE X-RAY ABSORPTION
    SAYERS, DE
    MANSOUR, A
    STERN, EA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 440 - 440
  • [49] Growth of 3C-SiC on Si by low temperature CVD
    Cloitre, T.
    Moreaud, N.
    Vicente, P.
    Sadowski, M.L.
    Aulombard, R.L.
    Materials Science Forum, 2001, 353-356 : 159 - 162
  • [50] Channel epitaxy of 3C-SiC on si substrates by CVD
    Nishino, S
    Okui, Y
    Jacob, C
    Ohshima, S
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 15 - 22
12345