DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI

被引：0

作者：

WANG, KM

MA, SJ

SHI, BR

ZHAI, HY

LIU, XD

LIU, JT

LIU, XJ

机构：

[1] Department of Physics, Shandong University, Jinan

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 02期

关键词：

SEMICONDUCTORS; IMPURITIES IN SEMICONDUCTORS; RADIATION EFFECTS; HELIUM SURFACE SCATTERING;

D O I：

10.1016/0038-1098(94)00617-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon wafers were amorphized by 2 x 10(15) Ar+/cm(-1) and 3 x 10(17) Ar+/cm(-2) (abbreviated by a-Si and a-Si(Ar), respectively) and subsequently implanted with 400 keV Hg+ to a dose of 4 x 10(15) ions/cm(-2). The diffusion and evaporation of the implanted Hg and recrystallization of the Hg-implanted amorphous Si have been studied over the temperature range of 700-1000 degrees C by MeV He ion Rutherford backscattering/channeling technique. It is found that at 700 degrees C, thermal diffusion dominates and there is no loss of implanted Hg in a-Si. The diffusion coefficient obtained is 7.8 x 10-(15) cm(2) s(-1). Above 800 degrees C, the evaporation is a dominant mechanism. At 1000 degrees C, the implanted Hg disappears. Recrystallization phenomena is also observed. But for a-Si(Ar) at 700 degrees C, 87% of the implanted Hg is lost and at 800 degrees C the Hg disappears totally. The remaining Ar segregates towards the surface and amorphous-crystalline interfaces.

引用

页码：155 / 158

页数：4

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