ELECTRON ESCAPE DEPTH IN SILICON

被引：153

作者：

KLASSON, M ^{[1
]}

BERNDTSSON, A ^{[1
]}

HEDMAN, J ^{[1
]}

NILSSON, R ^{[1
]}

NYHOLM, R ^{[1
]}

NORDLING, C ^{[1
]}

机构：

[1] UNIV UPPSALA, INST PHYS, BOX 530, S-75121 UPPSALA, SWEDEN

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1974年 / 3卷 / 06期

关键词：

D O I：

10.1016/0368-2048(74)80029-0

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：427 / 434

页数：8

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