FUNDAMENTAL-ASPECTS OF CZOCHRALSKI SILICON CRYSTAL-GROWTH FOR VLSI

被引：0

作者：

BENSON, KE ^{[1
]}

LIN, W ^{[1
]}

MARTIN, EP ^{[1
]}

机构：

[1] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C92 / C92

页数：1

共 50 条

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