FUNDAMENTAL-ASPECTS OF CZOCHRALSKI SILICON CRYSTAL-GROWTH FOR VLSI

被引：0

作者：

BENSON, KE ^{[1
]}

LIN, W ^{[1
]}

MARTIN, EP ^{[1
]}

机构：

[1] BELL TEL LABS INC,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C92 / C92

页数：1

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[1] DEVELOPMENTS IN CZOCHRALSKI SILICON CRYSTAL-GROWTH
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[J]. SOLID STATE TECHNOLOGY, 1983, 26 (08) : 221 - 225
[2] CZOCHRALSKI SILICON CRYSTAL-GROWTH AND CHARACTERIZATION
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[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1979, 27 (1-2): : 33 - 40
[3] CZOCHRALSKI SILICON CRYSTAL-GROWTH AT REDUCED PRESSURES
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[4] DIGITAL-CONTROL OF CZOCHRALSKI SILICON CRYSTAL-GROWTH
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[J]. SOLID STATE TECHNOLOGY, 1985, 28 (01) : 165 - 168
[5] HEAT-TRANSFER IN SILICON CZOCHRALSKI CRYSTAL-GROWTH
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[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (03) : 448 - 460
[6] ON THE DYNAMICS OF CZOCHRALSKI CRYSTAL-GROWTH
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 83 (01) : 137 - 151
[7] EFFECT OF A MAGNETIC-FIELD ON CZOCHRALSKI SILICON CRYSTAL-GROWTH
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[J]. INORGANIC MATERIALS, 1991, 27 (10) : 1723 - 1728
[8] BEHAVIOR OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON DURING CRYSTAL-GROWTH
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[9] LOW OXYGEN-CONTENT CZOCHRALSKI SILICON CRYSTAL-GROWTH
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[10] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547

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