RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES

被引：110
|
作者：
DASILVA, EF [1 ]
NISHIOKA, Y [1 ]
MA, TP [1 ]
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/TNS.1987.4337451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1190 / 1195
页数：6
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