RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES

被引：110
|
作者：
DASILVA, EF [1 ]
NISHIOKA, Y [1 ]
MA, TP [1 ]
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期
关键词：
D O I：
10.1109/TNS.1987.4337451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1190 / 1195
页数：6
相关论文
共 50 条
  • [1] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS
    WINOKUR, PS
    SCHWANK, JR
    MCWHORTER, PJ
    DRESSENDORFER, PV
    TURPIN, DC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1453 - 1460
  • [2] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS.
    Winokur, P.S.
    Schwank, J.R.
    McWhorter, P.J.
    Dressendorfer, P.V.
    Turpin, D.C.
    1600, (NS-31):
  • [3] RADIATION HARDENED MICRON AND SUBMICRON MOSFETS CONTAINING FLUORINATED OXIDES
    NISHIOKA, Y
    OHYU, K
    OHJI, Y
    KATO, M
    DASILVA, EF
    MA, TP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 2116 - 2123
  • [4] IONIZING-RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN GATE OXIDES
    SHIONO, N
    SHIMAYA, M
    SANO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (09): : 1430 - 1435
  • [5] RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80-DEGREES-K
    SAKS, NS
    ANCONA, MG
    MODOLO, JA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1249 - 1255
  • [6] RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80 degree K.
    Saks, N.S.
    Ancona, M.G.
    Modolo, J.A.
    IEEE Transactions on Nuclear Science, 1984, NS-31 (06) : 1249 - 1255
  • [7] IMPROVEMENT OF RADIATION HARDNESS DUE TO AGING OF FLUORINATED AND CHLORINATED SIO2 SI MOS CAPACITORS
    WANG, XW
    WANG, Y
    WANG, DC
    MA, TP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2252 - 2256
  • [8] CUMULATIVE RADIATION EFFECTS IN MOS CAPACITORS
    HOLMSTROM, FE
    CHURCHILL, JN
    COLLINS, TW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (01): : 30 - 30
  • [9] Effect of ionizing radiation on MOS capacitors
    Chauhan, RK
    Chakrabarti, P
    MICROELECTRONICS JOURNAL, 2002, 33 (03) : 197 - 203
  • [10] Radiation Effects in MOS Oxides
    Schwank, James R.
    Shaneyfelt, Marty R.
    Fleetwood, Daniel M.
    Felix, James A.
    Dodd, Paul E.
    Paillet, Philippe
    Ferlet-Cavrois, Veronique
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) : 1833 - 1853
12345