ANTIPHASE DIRECT BONDING AND ITS APPLICATION TO THE FABRICATION OF INP-BASED 1.55-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES

被引：40

作者：

OKUNO, Y

UOMI, K

AOKI, M

TANIWATARI, T

SUZUKI, M

KONDOW, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose anti-phase direct bonding and report on the first demonstration of its application to device fabrication. Cross-sectional observation by high-resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP-based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in-phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50°C. © 1995 American Institute of Physics.

引用

页码：451 / 453

页数：3

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