ANTIPHASE DIRECT BONDING AND ITS APPLICATION TO THE FABRICATION OF INP-BASED 1.55-MU-M WAVELENGTH LASERS ON GAAS SUBSTRATES

被引：40
|
作者：
OKUNO, Y
UOMI, K
AOKI, M
TANIWATARI, T
SUZUKI, M
KONDOW, M
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期
关键词：
D O I：
10.1063/1.114053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose anti-phase direct bonding and report on the first demonstration of its application to device fabrication. Cross-sectional observation by high-resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP-based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in-phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50°C. © 1995 American Institute of Physics.
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页码：451 / 453
页数：3
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