MOS CHARACTERISTICS OF NH3-NITRIDED N2O-GROWN OXIDES

被引：39

作者：

YOON, GW ^{[1
]}

JOSHI, AB ^{[1
]}

KIM, J ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期

关键词：

D O I：

10.1109/55.215158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new technique, namely NH3 nitridation of N2O oxides, is proposed and demonstrated to increase nitrogen concentration in N2O oxides so as to improve the resistance to boron penetration, without any adverse effects on electrical and reliability properties. Results show that NH3-nitrided N2O oxides show excellent electrical (low fixed charge) and reliability properties (smaller charge trapping and suppressed interface state generation), with an additional advantage of significantly improved resistance to boron penetration. This technique may have a great impact on deep-submicrometer dual-gate CMOS technology.

引用

页码：179 / 181

页数：3

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