CHARACTERIZATION OF CD IMPLANTED AND ANNEALED GAAS AND INP BY PERTURBED ANGULAR-CORRELATION (PAC) SPECTROSCOPY

被引：9
|
作者：
PFEIFFER, W
DEICHER, M
KELLER, R
MAGERLE, R
PROSS, P
SKUDLIK, H
WICHERT, T
WOLF, H
FORKEL, D
MORIYA, N
KALISH, R
机构：
[1] UNIV SAARLAND,W-6600 SAARBRUCKEN,GERMANY
[2] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
[3] CERN,DIV EP,CH-1211 GENEVA 23,SWITZERLAND
[4] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL
[5] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
来源：
APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(91)90155-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Investigations of Cd-111m implanted GaAs and InP crystals using the microscopically sensitive perturbed angular correlation technique show that the implanted Cd is incorporated on unperturbed substitutional lattice sites during rapid thermal annealing at significant lower temperatures than for electrical activation is required. In GaAs the higher implantation temperature at 473 K did not show any influence on this annealing stage, whereas a higher implantation dose hinders the annealing. We conclude that not only the local environment of the implant but also the long-range lattice perfection has to be restored for the electrical activation of implants in III-V compound semiconductors.
引用
收藏
页码：154 / 158
页数：5
相关论文
共 50 条
  • [41] PERTURBED ANGULAR-CORRELATION ASSOCIATED WITH OPTICAL-ABSORPTION FOR THE STUDY OF HIGH-DOSE IN IMPLANTED LIF
    PEREZ, A
    DAVENAS, J
    DUPIN, JP
    MAREST, G
    HAROUTUNIAN, R
    NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 441 - 447
  • [42] STUDY OF DEFECTS IN NIOBIUM BY PERTURBED ANGULAR-CORRELATION OF RH-100 AND CD-111
    SIELEMANN, R
    METZNER, H
    KLAUMUNZER, S
    BUTT, R
    HAAS, H
    VOGL, G
    HYPERFINE INTERACTIONS, 1981, 10 (1-4): : 701 - 704
  • [43] DESTABILIZATION OF EGG LECITHIN LIPOSOMES ON THE SKIN AFTER TOPICAL APPLICATION MEASURED BY PERTURBED GAMMA-GAMMA ANGULAR-CORRELATION SPECTROSCOPY (PAC) WITH IN-111
    SCHUBERT, R
    JOOS, M
    DEICHER, M
    MAGERLE, R
    LASCH, J
    BIOCHIMICA ET BIOPHYSICA ACTA, 1993, 1150 (02) : 162 - 164
  • [44] PERTURBED ANGULAR-CORRELATION OBSERVATION OF VACANCY INDIUM ATOM DEFECT COMPLEXES IN (HG, CD)TE
    HUGHES, WC
    SWANSON, ML
    AUSTIN, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2): : 244 - 247
  • [45] INTRINSIC AND EXTRINSIC DEFECTS IN SEMICONDUCTORS STUDIED BY PERTURBED GAMMA-GAMMA ANGULAR-CORRELATION SPECTROSCOPY
    WICHERT, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (02): : 207 - 212
  • [46] USE OF THE GAMMA-RAY PERTURBED ANGULAR-CORRELATION (PAC) TECHNIQUE FOR MONITORING LIPOSOMAL PHOSPHOLIPID-BILAYER INTEGRITY
    MA, WL
    HWANG, KJ
    LEE, VHL
    PHARMACEUTICAL RESEARCH, 1993, 10 (02) : 252 - 257
  • [47] PERTURBED ANGULAR-CORRELATION STUDIES OF THE HF-EDTA COMPLEX
    DAS, SK
    TOMAR, BS
    PRAKASH, S
    POLYHEDRON, 1990, 9 (22) : 2705 - 2708
  • [48] PERTURBED ANGULAR-CORRELATION STUDIES OF DOPANT ATOM INTERACTIONS IN SILICON
    WICHERT, T
    SWANSON, ML
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 3026 - 3037
  • [49] PERTURBED ANGULAR-CORRELATION AND SUM PEAK ON CHEMICAL-STATES
    YOSHIHARA, K
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1979, (APR): : 7 - +
  • [50] A FURNACE FOR HIGH-TEMPERATURE PERTURBED ANGULAR-CORRELATION MEASUREMENTS
    FORKER, M
    HERZ, W
    HUTTEN, U
    MULLER, M
    MUSSELER, R
    SCHMIDBERGER, J
    SIMON, D
    WEINGARTEN, A
    BEDI, SC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 327 (2-3): : 456 - 462
12345