LONG-WAVELENGTH EDGE OF THE RESIDUAL PHOTOCONDUCTIVITY OF INDOPED PB0.78SN0.22TE

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作者：

VORONOVA, ID

GORNIK, E

KLYSHEVICH, EV

KREMSER, C

CHEBOTAREV, AP

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SEMICONDUCTORS | 1993年 / 27卷 / 05期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：454 / 455

页数：2

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[24] Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
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[25] Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region
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[26] INFLUENCE OF AN ELECTRIC FIELD ON LONG-WAVELENGTH EDGE OF IMPURITY PHOTOCONDUCTIVITY OF GERMANIUM DOPED WITH ZINC AND MERCURY
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[29] Seebeck coefficient and electron energy band in (Pb0.78Sn0.22)(0.97)In0.03Te solid solutions with additional doping in the range of the hopping conductivity
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[30] INFLUENCE OF CADMIUM ON LONG-WAVELENGTH PHOTOSENSITIVITY EDGE OF PB1-XSNXTE SINGLE-CRYSTALS
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