TEMPERATURE-DEPENDENCE OF THE LATTICE-DYNAMICS OF THE LAYERED SEMICONDUCTOR IN2SE3

被引：5
|
作者：
JULIEN, C
BALKANSKI, M
机构：
[1] Laboratoire de Physique Des Solides, C.N.R.S, U.R.A. 154, Université Pierre Et Marie Curie, Paris
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 02期
关键词：
D O I：
10.1002/pssb.2221730208
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature dependence of the infrared reflectivity of the layered semiconductor In2Se3 is studied in the range from 10 to 500 cm-1. The behaviour of normal modes is reported from 5 K up to room temperature. Reflectivity spectra are fitted with a four-parameter dispersion model based on the factorized form of the dielectric function. The temperature dependence of the phonon frequencies and damping is reported. An anomaly in the LO frequency which is observed at 160 K, is related with the alpha'-phase transition reported by electron microscopy measurements.
引用
收藏
页码：569 / 577
页数：9
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