OPTIMIZED SELECTIVE MIXING OF A GAAS/GAALAS QUANTUM-WELL FOR THE FABRICATION OF QUANTUM WIRES

被引：24

作者：

VIEU, C ^{[1
]}

SCHNEIDER, M ^{[1
]}

BENASSAYAG, G ^{[1
]}

PLANEL, R ^{[1
]}

BIROTHEAU, L ^{[1
]}

MARZIN, JY ^{[1
]}

DESCOUTS, B ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,BAGNEUX LAB,F-92220 BAGNEUX,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.350601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the structure of a GaAs/GaA1As quantum well, which can promote strong mixing rates upon high-dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum-well wires by Ga+ masked implantation. Low-temperature photoluminescence measurements reveal large lateral modulations of the effective band gap (> 178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one-dimensional quantization energies between 11 and 20 meV can be expected in these structures.

引用

页码：5012 / 5015

页数：4

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