NBN BASED JOSEPHSON-JUNCTIONS WITH SILICON BARRIERS DEPOSITED AT 700-DEGREES-C

被引：1
|
作者：
CUKAUSKAS, EJ
CARTER, WL
机构：
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1989年 / 25卷 / 02期
关键词：
D O I：
10.1109/20.92519
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1235 / 1238
页数：4
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