ANTIPHASE-DOMAIN-FREE GAAS GROWN ON PSEUDOMORPHIC SI (100) SURFACES BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

ADOMI, K ^{[1
]}

STRITE, S ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 05期

关键词：

D O I：

10.1063/1.102768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4°toward [011] and [001] in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two-dimensional single-domain GaAs epitaxy after only 80 Å of deposition as observed by in situ high-energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.

引用

页码：469 / 471

页数：3

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