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- [1] Influence of deposition conditions on properties of a-SiGe:H prepared by microwave-excited plasma CVD Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (07): : 1126 - 1131
- [3] CHEMICAL VAPOR-DEPOSITION OF A-SIGE-H FILMS UTILIZING A MICROWAVE-EXCITED PLASMA JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L288 - L290
- [5] INFLUENCE OF DEPOSITION PARAMETERS ON DEFECT FORMATION IN A-SIGE-H ALLOYS PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 71 (05): : 851 - 869
- [6] INFLUENCE OF CHAMBER PRESSURE ON HYDROGEN-BONDING CONFIGURATIONS IN A-SIGE-H FILMS PREPARED BY PHOTO-CVD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11): : 2365 - 2370
- [7] HIGH-QUALITY A-SIGE-H ALLOYS PREPARED BY NANOMETER DEPOSITION H-2 PLASMA ANNEALING METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (2B): : L203 - L206
- [8] MICROWAVE-EXCITED PLASMA CVD OF A-SI-H FILMS UTILIZING A HYDROGEN PLASMA STREAM OR BY DIRECT EXCITATION OF SILANE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (08): : 1215 - 1218
- [10] INFLUENCE OF DEPOSITION CONDITIONS ON THE PROPERTIES OF SILICON-NITRIDE FILMS PREPARED BY THE ECR PLASMA CVD METHOD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (12): : 2015 - 2021