EFFECT OF ELECTRONEGATIVITY DIFFERENCE ON DEFECT CHEMISTRY IN LONE-PAIR SEMICONDUCTORS

被引：44
|
作者：
FRITZSCHE, H
GACZI, PJ
KASTNER, M
机构：
[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139
[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期
关键词：
D O I：
10.1080/01418637808226453
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：593 / 600
页数：8
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