TEMPERATURE EFFECT OF ELECTRICAL PROPERTIES OF CIGS SOLAR CELL

被引：0

作者：

Ferouani, A. M. ^{[1
]}

Boudia, M. R. Merad ^{[1
]}

Cheknane, A. ^{[2
]}

Benyoucef, B. ^{[2
]}

机构：

[1] Univ Tlemcen, Fac Sci, Unite Rech Mat & Energies Renouvelables, Dept Phys, B-P119, Tilimsen 13000, Algeria

[2] Univ Amar Telidji Laghouat, Laghouat, Algeria

来源：

JOURNAL OF FUNDAMENTAL AND APPLIED SCIENCES | 2011年 / 3卷 / 01期

关键词：

Thin film solar cells; SCAPS; CIGS; temperature; effiency energetic;

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this paper we are interested in studying the copper-indium-gallium-selenium (CIGS) solar cells sandwiched between cadmium sulfide (CdS) and ZnO as buffer layers, and Molybdenum (Mo). Thus, we report our simulation results using the capacitance simulator (SCAPS) in terms of layer thickness, absorber layer band gap and operating temperature to find out the optimum choice. An efficiency of 20.61% (with V-oc of 635.2mV, J(sc) of 44.08 mA/cm(2) and fill factor of 0.73) has been achieved with CdS used as buffer layer as the reference case. It is also found that the high efficiency CIGS cells with the low temperature were a very high efficiency conversion.

引用

页码：77 / 84

页数：8

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