SCANNING TUNNELING MICROSCOPY STUDY OF TIOX ON RH(111)

被引：14
|
作者：
WANG, HC
OGLETREE, DF
SALMERON, M
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词：
D O I：
10.1116/1.585526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scanning tunneling microscopy has been used to study submonolayer coverages of titanium oxide on rhodium. After reduction with CO, titania is shown to form one atomic layer thick island approximately 20 angstrom in size on the Rh(111) surface at submonolayer coverages. High resolution filled state images show enhanced contrast at the island perimeter. The "ring shaped" appearance of the islands is related to the electronic structure of the titania overlayer.
引用
收藏
页码：853 / 856
页数：4
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