SELF-CONSISTENT SIMULATION OF A HIGH-POWER 73 GHZ INTEGRATED IMPATT OSCILLATOR

被引：0
|
作者：
ANZILL, W [1 ]
GOELLER, T [1 ]
KAERTNER, FX [1 ]
RUSSER, P [1 ]
BUECHLER, J [1 ]
机构：
[1] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 20期
关键词：
Microwave oscillators; Simulation;
D O I：
10.1049/el:19901084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quasistatic IMPATT diode moud for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：1697 / 1698
页数：2
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