SELF-CONSISTENT SIMULATION OF A HIGH-POWER 73 GHZ INTEGRATED IMPATT OSCILLATOR

被引：0

作者：

ANZILL, W ^{[1
]}

GOELLER, T ^{[1
]}

KAERTNER, FX ^{[1
]}

RUSSER, P ^{[1
]}

BUECHLER, J ^{[1
]}

机构：

[1] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 20期

关键词：

Microwave oscillators; Simulation;

D O I：

10.1049/el:19901084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quasistatic IMPATT diode moud for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1697 / 1698

页数：2

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