FORWARD-BIAS STRESS EFFECTS ON BJT GAIN AND NOISE CHARACTERISTICS

被引:4
|
作者
SUN, CJ
GROTJOHN, TA
HUANG, CJ
REINHARD, DK
YU, CCW
机构
[1] MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
[2] IBM CORP,KINGSTON,NY 12401
关键词
D O I
10.1109/16.285032
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of large current forward-bias stress on bipolar transistor gain and noise characteristics was investigated. The combination of high currents and high temperatures produced gain degradations or failures of transistors from three technologies. Similarly the application of high currents and high temperatures produced changes in transistor noise characteristics. Specifically, in all transistors stressed, the low-frequency noise initially decreased. It was also observed in two technologies that the noise eventually increased again as the stress continued. Electromigration induced stress is believed to play an important role in these phenomena. The third technology eventually showed failures of the transistors due to electromigration produced open circuits.
引用
收藏
页码:787 / 792
页数:6
相关论文
共 50 条
  • [21] A Transistor Model for Numerical Computation of Forward-Bias Second-Breakdown Boundary
    Jovanovic, Milan M.
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 1991, 6 (02) : 199 - 207
  • [22] INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODES
    DENEUVILLE, A
    BRODSKY, MH
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1414 - 1421
  • [23] ANALYSIS OF FORWARD-BIAS P-I-N-DIODE INDUCTIVE DRIVING
    GEORGOPOULOS, CJ
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (04) : 394 - 402
  • [24] Improvement of luminous efficiency in white light emitting diodes by reducing a forward-bias voltage
    Narukawa, Yukio
    Sano, Masahiko
    Ichikawa, Masatsugu
    Minato, Shunsuke
    Sakamot, Takahiko
    Yamada, Takao
    Mukai, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40): : L963 - L965
  • [25] Understanding the Role of Proton and Hydroxide Transport in Forward-Bias Bipolar Membrane for Electrochemical Applications
    Ge, Xiaoli
    Zhang, Chengyi
    Gogoi, Pratahdeep
    Janpandit, Mayuresh
    Prakash, Shwetha
    Yin, Longwei
    Wang, Ziyun
    Li, Yuguang C.
    ADVANCED MATERIALS INTERFACES, 2024, 11 (16)
  • [26] Forward-bias operation of Si detectors: a way to work in high-radiation environment
    Beattie, LJ
    Chilingarov, A
    Sloan, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 439 (2-3): : 293 - 302
  • [27] Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor
    Chen, Hsiang
    Hsieh, Kun Min
    He, Yun Yang
    Chu, Li Chen
    Lee, Ming Ling
    Chang, Kow Ming
    JOURNAL OF NEW MATERIALS FOR ELECTROCHEMICAL SYSTEMS, 2016, 19 (01) : 7 - 10
  • [28] Pure-Water-Fed Forward-Bias Bipolar Membrane CO2 Electrolyzer
    Hesselmann, Matthias
    Lee, Jason Keonhag
    Chae, Sudong
    Tricker, Andrew
    Keller, Robert Gregor
    Wessling, Matthias
    Su, Ji
    Kushner, Douglas
    Weber, Adam Z.
    Peng, Xiong
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (19) : 24649 - 24659
  • [29] The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs
    Axelsson, Olle
    Thorsell, Mattias
    Andersson, Kristoffer
    Rorsman, Niklas
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (01) : 40 - 46
  • [30] DEPLETION-REGION WIDTH OF P-N-JUNCTION UNDER HIGH FORWARD-BIAS CONDITIONS
    JAIN, LC
    GARUD, GN
    PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1979, 126 (05): : 361 - 364