SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN INP OBSERVED BY ATOMIC-FORCE MICROSCOPY

被引：2
|
作者：
HSU, CC
WONG, TKS
WILSON, IH
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 133卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90120-L
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Steps of monolayer height (0.29 nm) were observed by atomic force microscopy (AFM) after growth of a 600 nm thick epitaxial layer of InP by metalorganic vapour phase epitaxy on a vicinal InP substrate. The mean terrace width of 240 nm was found to be similar to that on a vicinal InP substrate annealed at the growth temperature. The growth mode was consistent with the Burton-Cabrera-Frank (BCF) theory and the steps were ''morphologically stable'' during growth.
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页码：185 / 188
页数：4
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