PHOTOELECTRON EMISSION FROM GERMANIUM AND SILICON IN THE AMORPHOUS AND CRYSTALLINE STATES

被引：0

|

作者：

BORZYAK, PG

MIROSHNICHENKO, LS

SARBEI, OG

机构：

来源：

SOVIET PHYSICS-SOLID STATE | 1960年 / 2卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：290 / 293

页数：4

相关论文

共 50 条

[1] OPTICAL PROPERTIES AND PHOTOELECTRON EMISSION OF AMORPHOUS AND CRYSTALLINE GERMANIUM FILMS
BORZYAK, PG
FEDOROVICH, RD
SOVIET PHYSICS-SOLID STATE, 1961, 2 (12): : 2683 - 2687
[2] The transition from amorphous silicon oxide to crystalline silicon studied by photoelectron diffraction
Westphal, C
Dreiner, S
Schürmann, M
Zacharias, H
SURFACE REVIEW AND LETTERS, 2002, 9 (02) : 735 - 740
[3] DENSITY OF STATES IN CRYSTALLINE AND AMORPHOUS-GERMANIUM
TONG, BY
SWENSON, JR
CHOO, FC
PHYSICAL REVIEW B, 1974, 10 (08): : 3338 - 3341
[4] Efficient light emission from crystalline and amorphous silicon nanostructures
Kanemitsu, Y
JOURNAL OF LUMINESCENCE, 2002, 100 (1-4) : 209 - 217
[5] EXISTENCE OF SURFACE-STATES ON AMORPHOUS AND CRYSTALLINE GERMANIUM
MILLER, JN
LINDAU, I
GARNER, CM
SPICER, WE
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 363 - 363
[6] ELECTRON SPECTRA DIFFERENTIATES BETWEEN AMORPHOUS AND CRYSTALLINE SILICON AND GERMANIUM
DURDEN, LR
SLACK, LH
AMERICAN CERAMIC SOCIETY BULLETIN, 1973, 52 (04): : 377 - 377
[7] PHOTOELECTRON AND SECONDARY ELECTRON EMISSION FROM GERMANIUM
BORZIAK, PG
SARBEI, OG
SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (09): : 1752 - 1757
[8] DENSITY OF STATES AND CARRIER DYNAMICS IN AMORPHOUS-SILICON GERMANIUM ALLOYS AND AMORPHOUS-GERMANIUM
UNOLD, T
COHEN, JD
FORTMANN, CM
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 809 - 812
[9] DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
STREET, RA
PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1836 - 1839
[10] NEW PARAMAGNETIC STATES IN AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
STUKE, J
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 145 - 150

← 1 2 3 4 5 →