DENSITY OF STATES AND CARRIER DYNAMICS IN AMORPHOUS-SILICON GERMANIUM ALLOYS AND AMORPHOUS-GERMANIUM

被引：5

作者：

UNOLD, T ^{[1
]}

COHEN, JD ^{[1
]}

FORTMANN, CM ^{[1
]}

机构：

[1] UNIV DELAWARE,INST ENERGY CONVERS,NEWARK,DE 19716

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80243-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Several a-Si1-xGex:H alloys and a-Ge:H grown by PECVD have been investigated using transient and steady state junction capacitance techniques. From transient photocapacitance and transient photocurrent measurements we estimate (mu-tau)h of order 10(-10)cm2/V and deep defect densities of order 10(16)cm-3 for our best a-Si1-xGex:H sample. The a-Ge:H samples investigated exhibited a large defect density (N(d) = 10(18)cm-3) but a low Urbach parameter (E(u) = 50meV). We found a large role of lattice relaxation for the dominant deep defect band in a-Si1-xGex:H.

引用

页码：809 / 812

页数：4

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