EFFECT OF LOW-TEMPERATURE TREATMENT ON AS AND B PROFILES IN SI

被引：0
|
作者：
VANGURP, GJ [1 ]
SMOLDERS, FJB [1 ]
SLOTBOOM, JW [1 ]
机构：
[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C355 / C355
页数：1
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