CARRIER TRAPPING AND RECOMBINATION IN AVALANCHE DIODES

被引：9
|
作者：
EERNISSE, EP
CHAFFIN, RJ
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 07期
关键词：
D O I：
10.1109/T-ED.1970.17024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：520 / +
页数：1
相关论文
共 50 条
  • [31] Ultrafast carrier dynamics in tetrahedral amorphous carbon: carrier trapping versus electron-hole recombination
    Carpene, E.
    Mancini, E.
    Dallera, C.
    Schwen, D.
    Ronning, C.
    De Silvestri, S.
    NEW JOURNAL OF PHYSICS, 2007, 9
  • [32] COOLING OF AVALANCHE DIODES
    BARANOWSKI, JJ
    HIGGINS, VJ
    BRAND, FA
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1967, MT15 (12) : 754 - +
  • [33] MICROWAVE AVALANCHE DIODES
    SZE, SM
    RYDER, RM
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1140 - +
  • [34] AVALANCHE INJECTION DIODES
    GIBSON, AF
    MORGAN, JR
    SOLID-STATE ELECTRONICS, 1960, 1 (01) : 54 - 69
  • [35] Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation
    Soelkner, G
    Voss, P
    Kaindl, W
    Wachutka, G
    Maier, KH
    Becker, HW
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2365 - 2372
  • [36] INFLUENCE OF CARRIER VELOCITY SATURATION IN UNSWEPT LAYER ON EFFICIENCY OF AVALANCHE TRANSIT TIME DIODES
    VANIPEREN, BB
    TJASSENS, H
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (06): : 1032 - +
  • [37] Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes
    Driussi, F.
    Pilotto, A.
    De Belli, D.
    Antonelli, M.
    Arfelli, F.
    Biasiol, G.
    Cautero, G.
    Menk, R. H.
    Nichetti, C.
    Selmi, L.
    Steinhartova, T.
    Palestri, P.
    2020 IEEE 33RD INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2020, : 175 - 180
  • [38] NOISE IN AVALANCHE DIODES
    HAITZ, RH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 671 - &
  • [39] CARRIER GENERATION, RECOMBINATION, TRAPPING, AND TRANSPORT IN SEMICONDUCTORS WITH POSITION-DEPENDENT COMPOSITION
    SAH, CT
    LINDHOLM, FA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 358 - 362
  • [40] Carrier trapping and recombination at carbon defects in bulk GaN crystals grown by HVPE
    Fang, Yu
    Wu, Xingzhi
    Yang, Junyi
    Wang, Jianping
    Wu, Quanying
    Song, Yinglin
    APPLIED PHYSICS LETTERS, 2021, 118 (11)
12345