EFFECT OF SURFACE TREATMENT ON SURFACE RECOMBINATION VELOCITY AND DIODE LEAKAGE CURRENT IN GAP

被引：36
|
作者：
STRINGFELLOW, GB [1 ]
机构：
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期
关键词：
D O I：
10.1116/1.569018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：908 / 913
页数：6
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