EFFECT OF SURFACE TREATMENT ON SURFACE RECOMBINATION VELOCITY AND DIODE LEAKAGE CURRENT IN GAP

被引：36
|
作者：
STRINGFELLOW, GB [1 ]
机构：
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期
关键词：
D O I：
10.1116/1.569018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：908 / 913
页数：6
相关论文
共 50 条
  • [1] Effect of surface recombination velocity on the threshold current and differential quantum efficiency of the surface-emitting laser diode
    Ogura, M
    Hsieh, HC
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (04) : 597 - 606
  • [2] Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
    Wang Liang-Ji
    Zhang Shu-Ming
    Zhu Ji-Hong
    Zhu Jian-Jun
    Zhao De-Gang
    Liu Zong-Shun
    Jiang De-Sheng
    Wang Yu-Tian
    Yang Hui
    CHINESE PHYSICS B, 2010, 19 (01)
  • [3] Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
    王良吉
    张书明
    朱继红
    朱建军
    赵德刚
    刘宗顺
    江德生
    王玉田
    杨辉
    Chinese Physics B, 2010, (01) : 501 - 504
  • [4] SURFACE TREATMENT OF SILICON FOR LOW RECOMBINATION VELOCITY
    MOORE, AR
    NELSON, H
    RCA REVIEW, 1956, 17 (01): : 5 - 12
  • [5] SURFACE RECOMBINATION VELOCITY
    DMITRIEV, SG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 1056 - 1056
  • [6] Surface treatment effects on the surface recombination velocity of ZnS/HgCdTe interface
    Choi, JH
    Lee, HC
    Choi, MS
    INFRARED DETECTORS AND FOCAL PLANE ARRAYS VI, 2000, 4028 : 390 - 396
  • [7] Effect of surface treatment on leakage current of GaAs/AlGaAs laser microcavities
    Kim, JY
    Lee, J
    Kim, J
    Kang, BK
    Kwon, O
    APPLIED PHYSICS LETTERS, 2003, 82 (25) : 4504 - 4506
  • [8] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT
    NELSON, RJ
    WILLIAMS, JS
    LEAMY, HJ
    MILLER, B
    CASEY, HC
    PARKINSON, BA
    HELLER, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C369 - C369
  • [9] REDUCTION OF THE GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT
    LEAMY, HJ
    NELSON, RJ
    WILLIAMS, JS
    MILLER, B
    CASEY, HC
    PARKINSON, BA
    HELLER, A
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 732 - 732
  • [10] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT
    NELSON, RJ
    WILLIAMS, JS
    LEAMY, HJ
    MILLER, B
    CASEY, HC
    PARKINSON, BA
    HELLER, A
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 76 - 79
12345