STRUCTURAL AND ELECTRICAL-PROPERTIES OF AL2O3 THIN-FILMS ON P-SI GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12
|
作者：
KIM, TW
YOM, SS
KANG, WN
YOON, YS
KIM, C
KIM, S
YANG, IS
WEE, YJ
机构：
[1] KOREA INST SCI & TECHNOL,APPL PHYS LAB,SEOUL 130650,SOUTH KOREA
[2] GOLDSTAR CENT RES LAB,SEOUL 137140,SOUTH KOREA
[3] EWHA WOMANS UNIV,DEPT PHYS,SEOUL 120750,SOUTH KOREA
来源：
APPLIED SURFACE SCIENCE | 1993年 / 65-6卷
关键词：
D O I：
10.1016/0169-4332(93)90768-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 10(11) eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films.
引用
收藏
页码：854 / 857
页数：4
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