共 50 条
- [1] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
- [2] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167
- [3] DRIFT VELOCITY AND AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1322 - 1324
- [4] FARADAY-EFFECT DUE TO HOT-ELECTRONS IN N-TYPE INSB [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1081 - 1083
- [5] SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1626 - 1630
- [7] AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB SUBJECTED TO TRANSVERSE MAGNETIC-FIELDS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 59 - 63
- [8] Effect of nonequilibrium LO phonons and hot electrons on far-infrared intraband absorption in n-type GaAs [J]. PHYSICAL REVIEW B, 1998, 57 (08): : R4222 - R4225
- [9] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
- [10] NONLINEAR SUSCEPTIBILITY OF CONDUCTION ELECTRONS IN INSB AND GENERATION OF TUNABLE FAR-INFRARED RADIATION [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 400 - 400