DOUBLE EPITAXY IMPROVES SINGLE-PHOTON AVALANCHE-DIODE PERFORMANCE

被引：129
|
作者：
LACAITA, A [1 ]
GHIONI, M [1 ]
COVA, S [1 ]
机构：
[1] POLITECN MILAN,CNR,CTR ELETTRON QUANTIST & STRUMENTAZ ELETTRON,I-20133 MILAN,ITALY
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 13期
关键词：
D O I：
10.1049/el:19890567
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：841 / 843
页数：3
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